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Facilities
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Ex Situ Characterization
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Ex Situ Characterization
- Scanning Probe Microscopy:
- OU
- Omicron UHV AFM/STM instrument on MBE system.
- Custom-built Besoke beetle/RHK Controller STM/STL (Luminescence) instrument.
- Custom-built UHV STM for semiconductor samples in cross-section.
- Topometrix Explorer AFM/STM a versatile in-air used to characterize semiconductors, polymers, and plastics.
- UA
- Vecco/Digital Instruments Dimension 3100/Nanoscope IV AFM. Imaging
modes/features/accessories include topographic (contact and tapping),
friction, phase, tunneling/conductive AFM imaging modes, Q-control,
Signal Access Module (full signal break-out box), closed-loop scan
head (for nanomanipulation/nanolithography).
- Kodak MDS 120 digital science microscope documentation system.
- Nikon and Olympus optical microscopes.
- Meiji metallurgical microscope system.
- Digital Instruments Dimension 3000/Nanoscope III AFM/SPM.
- X-ray Diffractometer:
- OU
- Philips Materials Research Diffractometer (MRD) with a four-crystal
monochromator to characterize MBE samples.
- Scintag X2 diffractometer optimized for
low-angle scattering to characterize mesoscopic and nano-materials.
- UA
- Philips X'Pert X-Ray Diffractometer (XRD), includes point and
line focus optics, scan modes include standard theta/two-theta,
glancing angle (two-theta only), rocking (theta only), pole figures
and high resolution (4-crystal monochromator) scans, attachments
include an 80K-575K temperature controlled stage and a SAXS (small
angle x-ray scattering) attachment.
- Optical Microscope:
- OU
- Nikon OPTIPHOT-66 with Nomarski phase contrast used in evaluating
surface morphology.
- UA
- Kodak MDS 120 digital science microscope documentation system.
- Nikon and Olympus optical microscopes.
- Meiji metallurgical microscope system.
- Confocal Microscope:
- OU
- UA
- Leica Confocal Microscope, Model TCS-4D. 3D imaging with 0.17-µm lateral resolution.
- Hall Effect Measurement Station:
- OU
- Custom-built PC-driven I/V controllers with closed-cycle He fridge. Used for
carrier density and mobility in MBE samples. Magnetic fields up to 0.2T and
at temperatures between 6 and
300 K.
- UA
- Lakeshore Model 9709 9-Tesla Hall measurement system, variable
temperature <2K - 400K
- SQUID Magnetometer:
- OU
- UA
- Quantum Design MPMS SQUID magnetometer for
characterizing the magnetic properties of ferromagnetic layers.
- NMR Spectrometer:
- OU
- UA
- Bruker DSX-400 NMR spectrometer to perform
zero-field NMR characterization of ferromagnetic film structure.
- Fourier Transform Infrared Spectrometers:
- OU
- Biorad FTS-60A FTIR spectrometer for characterizing semiconductor structures from
4.2 to 300 K.
- Bruker Equinox 55 FTIR spectrometer for characterizing semiconductor structures from
4.2 to 300 K.
- UA
- Bruker FTIR/FT-Raman/FT-PL.
- Photoluminescence Spectrometer:
- OU
- Custom-built /Cold finger dewar/McPherson spectrometer with several laser/detector systems that span
the range from the visible to near infrared.
- UA
- Raman and Micro-Raman Spectrometer:
- OU
- UA
- SPEX 100 includes a high-resolution spectrometer
coupled with laser/detector systems that span the range from the
visible to the near infrared.
- Raman and micro-Raman Spectrometer with 514.5 nm laser excitation
source.
- Transmission Electron Microscopes:
- OU
- JEOL 2000-FX (200,000 volts)
scanning TEM with up to 1,000,000x magnitude, 0.14-nm resolution.
- ZEISS 10A Conventional Transmission Electron Microscope 200,000x
magnitude, 0.14-nm resolution.
- UA
- Scanning Electron Microscopes:
- OU
- JEOL JSM-880 SEM, with up to 300,000x magnification, 15 angstrom
resolution, with Kevex X-ray analyzer.
- ZEISS DSM-960A SEM, with up to 300,000x magnification, with OXFORD
Pentafet x-ray analyzer.
- UA
- Hitachi S-2300 SEM with KEvex Mark III X-ray microanalysis.
- ZFEI XL30-FEG ESEM w/EDAX Phoenix EDS system, attachments/detectors
include Peltier and hot stages, <10K - 475K Janis Research cryostage,
micromanipulator/nicroinjector, wide-angle detector, back-scattered
detector, gaseous SED, Everhart-Thornley SED.
- Nabity e-beam lithography facility (adjunct to FEI ESEM), includes
e-beam writer and all resist handling equipment - etching to be
done through HiDEC or MBE facility.
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