Research
IRG1: Nanostructures - Growth and Characterization
 Traditional
lithographic techniques are often impractical if not impossible at the
nanometer scale. This IRG studies the science needed to fabricate nanostructures
through self-assembly (epitaxially or in bulk through colloidal growth)
and selective area growth.
- Self-assembly involves the delicate control of surface properties so
that new growth spontaneously forms structures with the desired size,
shape, and spacing. This includes bulk reactive methods like the chemical
formation of colloidal semiconductors
- Selective area growth involves altering the surface structure
or chemistry with a scanning probe microscope so as to affect subsequent
deposition or etching.
It is not sufficient to simply fabricate a nanostructure;
we must also be able to control their location (say, in an ordered array)
and their connectivity (such as with quantum wires). Our ability to study
III-V and IV-VI compounds will allow us greater insight into spontaneous
ordering by comparing mechanisms in the two material systems.
These growth techniques will be complemented by our expertise in scanning
probe techniques ideally suited to characterize nanostructures, both optically
and electronically. The goal of this IRG is to gain full understanding
and control of dot and wire formation through experimental and theoretical
approaches.
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