Center for Semiconductor Physics in Nanostructures
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Harnessing
the ability to tune and control the interface structure and composition
on an atomic scale. Next generation semiconductor heterostructures will
be multi-functional: one component replaces tens of traditional components.
These devices will require atomic control of the structure at the interfaces.
Accomplishments:
Demonstration of the ability to tune & control the island coverage
using both temperature and pressure. We discovered that two-dimensional
GaAs islands will spontaneously form on the surface of GaAs without depositing
any material. Furthermore, we can tune the size and coverage of the islands.
Accomplishments: Here we show theoretical calculations for the
island coverage versus temperature for the celebrated 2D Ising system.
